Multiple chemical vapor deposition (CVD) tube-furnace systems are available to synthesize various 2D materials and heterostructures on substrates by chemical vapor transport, some incorporating plasma sources and rapid heating/cooling via sliding stages. Temperature programmable, with pressure controllable via throttle valves and mass flow controllers regulate gas supply.
Applications
The CVD systems are used to synthesize a variety of 2D materials and their heterostructures. Examples of past work include the synthesis of few and/or monolayers of MoS2, MoSe2, WS2, GaSe, PdSe2, etc.
Both vertical and lateral heterostructures of GaSe/MoSe2 or isotopic MoS2 were successfully synthesized using a two-step CVD method.
Specifications
- Designed for both 2” and 1” quartz tubes with the maximum temperature of 1200 °C.
- Two slidable PE-CVD tube furnaces employ a 300W RF plasma source.
- The gas flow rate ranges from 0-500 sccm and can be controlled by mass flow controllers.
- A heating belt reaching up to 350 °C can be added outside the furnace to create another heating zone for the second precursor.
- A throttle valve is installed for pressure control from 0-760 Torr.
- Lower temperature processing compared to conventional CVD
- High heating and cooling rate using a sliding furnace
- Two channels of gases including Ar and H2 are connected to each furnace to carry out the transport and reaction process.
- Each furnace is equipped with a mechanical pump and reaches a base vacuum of < 5 mTorr.
- The sliding furnace provides an automatic sliding mechanism allowing the furnace to slide from one side to the other for achieving the max heating and cooling rates of > 100°C/min for growing metastable 2D materials.
