The First Nano Rapid Thermal Processor (RTP) is a lamp-based heating system that allows modulation of film and substrate properties through thermal processing.
The RTP utilizes infrared lamp heating and is capable of controlled ramp rates or rapid maximum ramp rates approaching 100 °C per second. Samples can be heated in excess of 1200 °C in various ambient conditions and pressures ranging from 10 mTorr to atmospheric pressure.
Applications
- Growth of nanomaterials on lithographically defined metal thin-films, modulation of thin film stress, modulation of as deposited thin film stoichiometry via reduction and/or oxidation, reflow/dewetting of materials during annealing, driving of dopants into materials to control electrical behavior and/or etch sensitivity.
- Solid phase dewetting of thin metal films is a convenient bottom up strategy that enables facile nanoscale patterning without lithography.
RTP De-wetted Pt metal films at different thickness on silicon dioxide followed by 5 mins RIE (clockwise from top left): 3nm, 6nm, 9nm, 15nm
Specifications:
- Recipe controlled processing
- Temperatures up to 1200 °C
- Process pressure from 10 mTorr up to atmospheric pressure
- H2, O2, Ar, and N2 process gases
- Single 4” wafer or small chip processing
Recent Publications
Phonon-induced multicolor correlations in hBN single-photon emitters
