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Absence of localized-spin magnetic scattering in the narrow-gap semiconductor FeSb2...

by Igor Zaliznyak, Andrei T Savici, Vasile O Garlea, Rongwei Hu, C Petrovic
Publication Type
Journal
Journal Name
Physical Review B
Publication Date
Page Number
184414
Volume
83
Issue
18

We report inelastic neutron scattering measurements aimed at investigating the origin of the
temperature-induced paramagnetism in the narrow-gap semiconductor FeSb2. We find that inelastic
response for energies up to 60 meV and at temperatures ~ 4.2 K, ~ 300 K and ~ 550 K is consistent
with scattering by the lattice phonon excitations. Hence, we observe no evidence for a well-defined
magnetic excitation corresponding to transitions between the non-magnetic ground state and states
of magnetic multiplet in the localized spin picture. However, a broad magnetic scattering continuum
in the 15 meV to 35 meV energy range is not ruled out by our data. Our findings make description
in terms of the localized Fe magnetic states unlikely and suggest that paramagnetic susceptibility
of itinerant electrons is at the origin of the temperature-induced magnetism in FeSb2.