Publication Type
Journal
Journal Name
Physical Review Letters
Publication Date
Page Number
026801
Volume
106
Abstract
Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize
the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variabletemperature
measurements of the soliton population allow us to determine the soliton formation
energy to be 60 meV, smaller than one half of the band gap of 200 meV. Once created, these
solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish
nature is attributed to the exceptionally low attempt frequency for soliton migration. We further
demonstrate local electric field enhanced soliton dynamics, and the feasibility of aggregating solitons
into soliton polymers.