Abstract
Intrinsic domain wall width is a fundamental parameter that reflects bulk ferroelectric properties and
governs the performance of ferroelectric memory devices. We present closed-form analytical
expressions for vertical and lateral piezoelectric force microscopy PFM profiles of a single
ferroelectric domain wall for the conical and disk models of the tip, beyond point charge and sphere
approximations. The analysis takes into account the finite intrinsic width of the domain wall and
dielectric anisotropy of the material. These analytical expressions provide insight into the
mechanisms of PFM image formation and can be used for a quantitative analysis of the PFM
domain wall profiles. The PFM profile of a realistic domain wall is shown to be the convolution of
its intrinsic profile and the resolution function of PFM.
