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The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors...

Publication Type
Conference Paper
Publication Date
Conference Name
The annual workshop on Compound Semiconductor Reliability
Conference Location
Boston, Massachusetts, United States of America
Conference Date

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 × 1015 cm-2, or to a different doses of 2 × 1011, 5 × 1013 or 2 × 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.