Abstract
Graphene layers on SiO2/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids (HCl), bases (ammonium hydroxide), UV ozone, H2O and O2 plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 hours. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals.
