Abstract
We analyzed the crystallographic c-axis tilt of (001) Y<sub>2</sub>O<sub>3</sub> films grown on biaxially textured Ni-5%W tapes under different oxygen flux conditions. We found that different tilting mechanisms were effective in films with different oxygen stoichiometry. Moreover, the structure of the film/substrate interface, investigated by TEM, and the residual strain of the film, investigated by XRD, were also dependent on the film oxygen content. While the oxygen stoichiometric Y<sub>2</sub>O<sub>3</sub> sample exhibited a coherent film/substrate interface and the sharpest out-of-plane texture, the films grown under reduced oxygen pressure exhibited a smaller overall c-axis tilt due to formation of interface dislocations and regions in which the film oxygen vacancies ordered to form a lattice superstructure.
