Abstract
X-ray reflectivity (XRR) and neutron reflectivity (NR), as well as ultra-smallangle
X-ray scattering (USAXS), are used to examine the in-plane and surfacenormal
structure of anodic films formed on aluminium alloy AA2024 and pure
aluminium. Aluminium and alloy films up to 3500 A ° thick were deposited on Si
wafers by electron beam evaporation of ingots. Porous anodic aluminium oxide
(AAO) films are formed by polarizing at constant voltage up to 20 V noble to
the open circuit potential. The voltage sweet spot (5 V) appropriate for
constant-voltage anodization of such thin films was determined for both alloy
and pure Al. In addition, a new concurrent voltage- and current-control protocol
was developed to prepare films with larger pores (voltages higher than 5 V), but
formed at a controlled current so that pore growth is slow enough to avoid
stripping the aluminium substrate layer. USAXS shows that the pore size and
interpore spacing are fixed in the first 10 s after initiation of anodization. Pores
then grow linearly in time, at constant radius and interpore spacing. Using a
combination of XRR and NR, the film density and degree of hydration of the
films were determined from the ratio of scattering length densities. Assuming a
chemical formula Al2O3xH2O, it was found that x varies from 0.29 for the native
oxide to 1.29 for AAO grown at 20 V under concurrent voltage and current
control. The average AAO film density of the porous film at the air surface is
2.45 (20) g cm3. The density of the ‘barrier’ layer at the metal interface is
2.9 (4) g cm3, which indicates that this layer is also quite porous
