Publication Type
Conference Paper
Journal Name
Advanced Metallization Conference 2007 (AMC 2007)
Publication Date
Page Numbers
595 to 599
Volume
23
Conference Name
IEEE 2007 International Interconnect Technology Conference
Conference Location
Burlingame, California, United States of America
Conference Date
-
Abstract
Present efforts to minimize the resistivity of copper interconnects are discussed in terms of a comprehensive understanding of microstructure and electron scattering. A general approach for modeling resistivity that includes Monte-Carlo simulation of grain growth, first-principles modeling for grain boundary and interfacial resistivities, and a stochastic simulation for electron transport is presented. Determination of grain boundary resistivities for ��3 twin boundaries and ��5 twist boundaries serve to illustrate steps in this approach.
