Origin of radiation tolerance in 3C-SiC with nanolayered planar defects...

We have recently found that the radiation tolerance of SiC is highly enhanced by introducing
nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429
(2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron
microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC
containing nanolayers of (111) planar defects. We found that preferential amorphization, when it
does occur, takes place at grain boundaries and at ð111Þ and ð111Þ planar defects. Radiationinduced
point defects, such as interstitials and vacancies, migrate two-dimensionally between the
(111) planar defects, which probably enhances the damage recovery.