Abstract
We report on the influence of boron segregation on the thermoelectric properties of CoSi. Contrary to previous suggestions, and in stark contrast to aluminum substitution, boron does not enter the lattice on the Si site, but rather segregates to the grain boundaries in these alloys. Through a combination of x-ray diffraction, scanning electron microscope, and scanning Auger techniques, we present clear evidence of the formation of a CoB phase at the grain boundaries. Consistent with the failure of B to substitute for Si, we observe no changes in the electron concentration or the Seebeck coefficient under boron substitution. The electrical resistivity, on the other hand, displays a non-monotonic behavior with increasing boron concentration, first decreasing for small amounts of boron, before increasing at higher levels of substitution. We attribute this behavior to a combination of an initial healing effect of boron on microcracks, followed by the eventual increase in electron scattering by the secondary CoB phase at higher concentrations.
