Publication Type
Journal
Journal Name
Thin Solid Films
Publication Date
Page Numbers
5837 to 5842
Volume
515
Issue
15
Abstract
In-situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu-Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 �C, and the onset of
formation of CuGaSe2 occurred at approximately 300 �C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from selenization of Cu-Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (�7) kJ/mol.
