Publication Type
Conference Paper
Publication Date
Conference Name
APEC
Conference Location
Orlando, Florida, United States of America
Conference Date
-
Abstract
This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V / 20 A for a wide temperature range. The Pspice model is built using device parameters extracted through experiment. The static and dynamic behavior of the SiC power MOSFET is simulated and compared to the measured data to show the accuracy of the Pspice model. The switching losses are obtained from experiment under multiple operation conditions. The temperature dependent behavior has been simulated and analyzed. Then the parasitics in the circuit have been studied and the effects on the switching behavior are simulated and discussed.
