Publication Type
Journal
Journal Name
Crystal Growth & Design
Publication Date
Page Numbers
525 to 527
Volume
9
Issue
1
Abstract
Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and
phosphorus vapor at 1150 �C in a tube furnace system. The nanowires have diameters in the range of 25-100 nm and lengths of
up to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of
twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga-P-O microbeads
upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to
synthesize other important group III-V compound nanowires.
