Abstract
Luminescence and scintillation in ZnO single crystals were measured by photoluminescence and X-ray-induced luminescence (XRIL). XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. The origin of green emission, the dominant trap emission in ZnO, was investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials or the surroundings. The measurements showed the absence of positron traps in the crystals and yielded a bulk positron lifetime value that is in complete agreement with the predicted theoretical value = thereby confirming the advantage of the GIPS method. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE.