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Thallium-doping (5%) of BaFe2As2 crystal causes a surprising rise of the antiferromagnetic transition temperature (TN), related to magneto-elastic coupling. This is the first example of the increase of TN with chemical doping in BaFe2As2.
For the first time, researchers have synthesized lateral semiconductor heterojunctions in lithographically patterned arrays within a two-dimensional semiconductor crystal monolayer by a novel process that selectively converted exposed regions