Publication Type
Conference Paper
Journal Name
ECS Transactions
Publication Date
Page Number
225
Volume
11
Issue
3
Conference Name
212 Electrochemical Society of America Meeting
Conference Location
Washington, Virginia, United States of America
Conference Date
-
Abstract
Aberration correction in the scanning transmission electron microscope brings sub-�ngstr�m electron probe sizes and single atom sensitivity which enable the characterization of semiconductor devices and their defects with unprecedented detail. Further benefits include simultaneous bright field and dark field image acquisition and a new three-dimensional imaging technique. Here, we will review some major results obtained by aberration corrected scanning transmission electron microscopy and highlight some future research directions.