Abstract
Inclusion of spatial incoherence has been shown to give quantitative agreement between non-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy images and theoretical simulations. Here we show the same approach is valid for aberration-corrected probes, by fitting theoretical and experimental normalized integrated intensities obtained in ternary semiconductor alloys of calibrated composition. We have demonstrated that normalized integrated intensities show a low dependence on the sample thickness over a wide range of thickness values. This behavior does not occur in conventional (non-aberration-corrected) images and constitutes a powerful tool for straightforward interpretation of high-resolution images in terms of atomic column resolved compositional maps.