Abstract
Single crystalline 6H-SiC samples were irradiated at 150 K using 2MeV Pt ions. Local volume swelling is determined by electron energy loss spectroscopy (EELS), a nearly sigmoidal dependence with irradiation dose is observed. The disorder profiles and ion distribution are determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy and secondary ion mass spectrum. Since the volume swelling reaches 12% over the damage region under high ion fluence, lattice expansion is considered and corrected during the data analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stopping and Range of Ions in Matter). Comparing with the measured profiles, SRIM code significantly overestimates the electronic stopping power for the slow heavy Pt ions, and large derivations are observed in the predicted ion distribution and the damage profiles. Utilizing the reciprocity method that is based on the invariance of the inelastic excitation in ion–atom collisions against interchange of projectile and target, much lower electronic stopping is deduced. A simple approach based on reducing the density of SiC target in SRIM simulation is proposed to compensate the overestimated SRIM electronic stopping power values. Better damage profile and ion range are predicted.