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Dead-time optimization for SiC based voltage source converters using online condition monitoring

Publication Type
Conference Paper
Book Title
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Publication Date
Page Numbers
15 to 19
Issue
0
Publisher Location
New Jersey, United States of America
Conference Name
IEEE Workshop on Wide Bandgap Devices and Applications
Conference Location
Albuquerque, New Mexico, United States of America
Conference Sponsor
IEEE
Conference Date
-

This paper introduces a dead-time optimization technique for a 2-level voltage source converter (VSC) using turn-off transition monitoring. Dead-time in a VSC impacts power quality, reliability, and efficiency. Silicon carbide (SiC) based VSCs are more sensitive to dead-time from increased reverse conduction losses and turn-off time variability with operating conditions and load characteristics. An online condition monitoring system for SiC devices has been developed using gate drive assist circuits and a micro-controller. It can be leveraged to monitor turn-off time and indicate the optimal dead-time in each switching cycle of any converter operation. It can also be used to specify load current polarity, which is needed for dead-time optimization in an inverter. This is an important distinction from other inverter dead-time elimination/optimization schemes as current around the zero current crossing is hard to accurately detect. A 1kW half-bridge inverter was assembled to test the turn-off time monitoring and dead-time optimization scheme. Results show 91% reduction in reverse conduction power losses in the SiC devices compared to a set dead-time of 500ns switching at 50 kHz.