Abstract
Large-size vertical β -Ga 2 O 3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped n -type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) n -type β -Ga 2 O 3 substrate. In this letter, the devices have two circular contacts with a diameter of 1500 and 500 μm and two square contacts with dimensions of 1600 × 1600 μm 2 and 800 × 800 μm 2 , corresponding to the area of 0.2 × 10 −2 cm 2 (the smallest device), 0.6 × 10 −2 , 1.8 × 10 −2 , and 2.6 × 10 −2 cm 2 (the largest device). The breakdown voltage ( BV ) was determined to be −261 V for the largest device and −427 V for the smallest device. Also, the ideality factor ( η ) of vertical Ga 2 O 3 SBDs with different device areas exhibited the same value of 1.07, except for the largest device area of 2.6 × 10 −2 cm 2 with an ideality factor of 1.21. At an applied forward bias of VF = 2 V, the specific on -state resistance ( RonA ) of all the Ga 2 O 3 SBDs remains relatively low with values ranging from 1.43 × 10 −2 Ω cm 2 to 7.73 × 10 −2 Ω cm 2 . The measured turn- on voltage ( Von ) of all the SBDs remains low with a narrow distribution.
