Publication Type
Journal
Journal Name
Diamond and Related Materials
Publication Date
Page Numbers
28 to 33
Volume
23
Abstract
We report nucleation densities on Ir(100) surfaces that exceed 1011 cm-2 and remain roughly unchanged in a narrow bias voltage range of 50 V starting at 125 V. At lower and higher bias voltages outside of this window the nucleation density drops to values near zero within a 25 V step and remains independent of the bias voltage. We attribute this extreme sensitivity to a delicate nanostructured active Ir phase that is both formed and destroyed by ion bombardment with specific energies. The role of this phase is to mediate the formation of chemically specific carbon that is the precursor for diamond crystallite formation in the subsequent bias free growth stage.
