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Diffusivity of the interstitial hydrogen shallow donor in In 2 O 3...

Publication Type
Journal
Journal Name
Japanese Journal of Applied Physics
Publication Date
Page Number
161506
Volume
123
Issue
16

Hydrogen has been found to be an n-type dopant in In2O3 that gives rise to unintentional conductivity. An infrared (IR) absorption line observed at 3306 cm-1 has been assigned to the Hi+ center. Two types of experiments have been performed to determine the diffusivity of Hi+ in In2O3 from its IR absorption spectra. (i) At temperatures near 700 K, the O-H line at 3306 cm-1 has been used to determine the diffusivity of Hi+ from its in-diffusion and out-diffusion behavior. (ii) At temperatures near 160 K, stress has been used to produce a preferential alignment of the Hi+ center that has been detected in IR absorption experiments made with polarized light. With the help of theory, the kinetics with which a stress-induced alignment can be produced yield the time constant for a single jump of the Hi+ center and also the diffusivity of Hi+ near 160 K. The combination of the diffusivity of Hi+ found near 700 K by mass-transport measurements along with the diffusivity found near 160 K from the time constant for a single Hi+ jump determines the diffusivity for Hi+ over eleven decades!