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Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy...

Publication Type
Journal
Journal Name
Applied Physics Letters
Publication Date
Page Number
252901
Volume
92
Issue
25

We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size (r), approximately following a power law dependence of v ~ r -n with n = 0.4 � 0.15. The average value of v, obtained under applied electric field (Eapp), also agrees with Merz's law: i.e., <v> ~ exp(-E0/ Eapp) with an activation field E0 of about 650 kV/cm.