Publication Type
Journal
Journal Name
Science of Advanced Materials
Publication Date
Page Numbers
602 to 606
Volume
3
Issue
4
Abstract
We present the first systematic doping study on the ternary semiconductor Cu3SbSe 4 . We have developed a novel synthesis procedure that produces high-quality polycrystalline samples with hole concentrations an order of magnitude lower than have been reported for the undoped compound. The hole concentration can be increased by adding small amounts of either Ge or Sn on the Sb site. The power factor increases with increasing doping, reaching a maximum value of 16 µW/cmK^2 . The thermoelectric properties are optimized for the 2% Sn doped compound which has ZT=0.72 at 630K, rivaling that of state-of-the-art thermoelectric materials in this temperature range.
