Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer
layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated
and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest
critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and
100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers,
respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V,
however, this degraded to 50–60V for devices with thick GaN buffers due to the difference in
peak electric field near the gate edge. A similar trend was observed in the isolation breakdown
voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer
designs (600–700 V), while a much smaller Viso of 200V was measured on HEMTs with the
thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and
defect density on AlGaN/GaN HEMT performance and reliability.
