Abstract
The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility
transistors were investigated. In this study we used 5 MeV protons with doses varying from
21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans-
conductance. These results show that InAlN/GaN high electron mobility transistors are attractive
for space-based applications when high-energy proton fluxes are present. VC 2011 American
Vacuum Society. [DOI: 10.1116/1.3644480]
