Abstract
Hetero-interfaces between complex oxides have sparked considerable interest due to their fascinating physical properties and offer new possibilities for next-generation electronic devices. The key to realize practical applications is the control through external stimulus. In this study, we take the self-assembled BiFeO3-CoFe2O4 hetero-interface as a model system to demonstrate the non-volatile electric control of the local conduction at the complex oxide tubular interface. The fundamental mechanism behind this modulation was explored based on static and dynamic conducting atomic force microscopy. We found the movement of oxygen vacancies in the BiFeO3-CoFe2O4 heterostructure is the key to drive this intriguing behavior. This study delivers a possibility of designing new device for next-generation electronic devices.
