Abstract
This paper presents a high-temperature capable intelligent power module that contains SiC power
devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC
gate driver ICs allows for them to be packaged into the power module and be located physically
close to the power devices. This provides a distinct advantage by reducing the gate driver loop
inductance, which promotes high frequency operation, while also reducing the overall volume of the
system through higher levels of integration. The power module was tested in a bridgeless-boost
converter (Fig. 1) to determine the performance of the module in a system level application. The
converter was operated with a switching frequency of 200 kHz with a peak output power of
approximately 5 kW. The peak efficiency was found
to be 97.5% at 2.9 kW.
