Publication Type
Journal
Journal Name
Applied Physics Letters
Publication Date
Volume
97
Issue
26
Abstract
Nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structures showed an isolation
blocking voltage of 900 V with a leakage current at 1 A/mm across an implanted isolation-gap
of 10 m between two Ohmic pads. The effect of implanted gap distance 1.7, 5, or 10 m
between two Ohmic contact pads was evaluated. The isolation current density was determined to be
solely dependent on the applied field between the contact pads. A model using a combination of
resistive current and Poole–Frenkel current is consistent with the experimental data. The resistance
of the isolation implantation region significantly decreased after the sample was annealed at
temperatures above 600 °C.
