Abstract
10B isotope doped p-type diamond epilayer
grown by chemical vapor deposition on (110) oriented type
IIa diamond single crystal substrate was subjected to neutron
transmutation at a fluence of 2.4 9 1020 thermal and
2.4 9 1020 fast neutrons. After neutron irradiation, the epilayer
and the diamond substrate were laser annealed using
Nd–YAG laser irradiation with wave length, 266 nm and
energy, 150 mJ per pulse. The neutron irradiated diamond
epilayer and the substrate were characterized before and after
laser annealing using different techniques. The characterization
techniques include optical microscopy, secondary
ion mass spectrometry, X-ray diffraction, Raman, photoluminescence
and Fourier Transform Infrared spectroscopy,
and electrical sheet conductance measurement. The results
indicate that the structure of the irradiation induced amorphous
epilayer changes to disordered graphite upon laser
annealing. The irradiated substrate retains the (110) crystalline
structure with neutron irradiation induced defects.
