Abstract
Quasi-‐single
crystal
Ge
films
were
grown
on
[001]<010>
textured
Ni
substrate
at
a
temperature
of
350
oC
using
an
insulating
buffer
layer
of
CaF2.
A
direct
deposition
of
Ge
on
Ni
at
350
oC
was
shown
to
alloy
with
Ni.
From
x-‐ray
pole
figure
analysis,
it
was
shown
that
Ge
grew
epitaxially
with
the
same
orientation
as
CaF2
and
the
dispersions
in
the
out-‐of-‐plane
and
in-‐plane
directions
were
found
to
be
1.7±0.1o
and
6±1o,
respectively.
In
the
out-‐of-‐plane
direction,
Ge[111]||CaF2[111]||Ni[001].
In
addition,
the
Ge
consisted
of
four
equivalent
in-‐
plane
oriented
domains
such
that
two
mutually
orthogonal
directions:
Ge 211
and
Ge 011
are
parallel
to
mutually
orthogonal
directions:
Ni 110
and
Ni 110 ,
respectively
of
the
Ni(001)
surface.
This
was
shown
to
be
originated
from
the
four
equivalent
in-‐plane
oriented
domains
of
CaF2
created
to
minimize
the
mismatch
strain
between
CaF2
and
Ni
in
those
directions.