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Magnetic tunnel junction sensor with Co/Pt perpendicular anisotropy ferromagnetic layer...

by H. X. Wei, Q. H. Qin, Z. C. Wen, X. F. Han, Xiaoguang Zhang
Publication Type
Journal
Journal Name
Applied Physics Letters
Publication Date
Page Number
172902
Volume
94
Issue
17

Linear magnetoresistance (MR) is an important attribute for magnetic sensor designs for space applications, three dimensional detection of the magnetic field, and high field measurements. Here we demonstrate that a large linear MR of up to 22% can be achieved in a magnetic tunnel junction that consists of two ferromagnetic layers, one with out of plane and one with in plane magnetic anisotropy. The tunnelling magnetoresistance (TMR) is measured with the electrical current perpendicular to the film plane. The magnetic configuration of the device is analyzed.