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Molecular Sidebands of Refractory Elements for ISOL...

Publication Type
Conference Paper
Journal Name
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Publication Date
Page Numbers
4252 to 4256
Volume
266
Issue
19-20
Conference Name
XVth International Conference on Electromagnetic Isotope Separators and Techniques Related to their Applications
Conference Location
Deauville, France
Conference Sponsor
GANIL
Conference Date
-

The formation of molecular sidebands of refractory elements, such as V, Re, Zr, Mo, Tc, is discussed. The focus is on in situ sideband formation and its advantage for the release process. An atomic 48V beam has been produced in a two step process, forming the oxide in situ, transporting it through the target-ion source as a chloride and destroying the chlorine sideband in the ion source. The sideband formation of Re, Zr, Mo, Tc is discussed.