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Nanodopant-Induced Band Modulation in AgPbmSbTe2+m-Type Nanocomposites...

by Yi Zhang, Xuezhi Ke, Changfeng Chen, J Yang, Paul R Kent
Publication Type
Journal
Journal Name
Physical Review Letters
Publication Date
Page Number
206601
Volume
106
Issue
20

We elucidate the fundamental physics of nanoscale dopants in narrow band-gap thermoelectric nanocomposites XPbmYTe2+m (X=Ag,Na; Y=Sb,Bi) using first-principles calculations. Our re- sults unveil distinct band-structure modulations, most notably a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off at the conduction band minimum caused by the spin-orbit interaction of the dopant Sb or Bi atoms. Boltzmann transport calculations demon- strate that these band modulations have significant but competing effects on high-temperature elec- tron transport behavior. These results offer insights for understanding recent experimental findings and suggest principles for optimizing thermoelectric properties of narrow band-gap semiconductors.