Abstract
Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function technique to account for the finite bias voltage between the leads. Current across the junction is computed as a function of bias voltage.
Electron spectral functions in the interacting region are shown to evolve by an applied bias voltage, which are measurable by photoemission spectroscopy and scanning tunneling microscopy. Further predictions are made for the optical conductivity under a bias voltage as a possible tool to detect a deformed density of states. A general discussion of correlated-electron based heterostructures and future prospect is given.
