Publication Type
Journal
Journal Name
Journal of Vacuum Science & Technology B
Publication Date
Volume
27
Issue
6
Abstract
In0.52Al0.48As/In0.39Ga0.61As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2 1011 to 2 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2 1011 cm-2, which was equivalent to around 40 years of exposure in low earth orbit, showed minimal changes in the junction ideality factor, generation recombination leakage current, current gain and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well-suited to space or nuclear industry applications.
