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Selective Purcell enhancement of defect emission in ZnO thin films...

by Benjamin J Lawrie, R. Mu, Richard Haglund
Publication Type
Journal
Journal Name
Optics Letters
Publication Date
Page Numbers
1538 to 1540
Volume
37
Issue
9

A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 °C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag–ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.