Publication Type
Conference Paper
Book Title
2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
Publication Date
Page Numbers
2775 to 2779
Issue
0
Publisher Location
New Jersey, United States of America
Conference Name
IEEE Applied Power Electronics Conference and Exposition
Conference Location
San Antonio, Texas, United States of America
Conference Sponsor
IEEE
Conference Date
-
Abstract
The short circuit performance of a 3 rd generation 10 kV/20 A SiC MOSFET with short channel is characterized in this paper. The platform consisting of a phase-leg configuration, which can test both hard switching fault (HSF) and fault under load (FUL) types of fault, is introduced in detail. A Si IGBT based solid state circuit breaker is developed for short circuit test. The short circuit protection having a response time of 1.5 μs is validated by the test platform. The short circuit characteristics for both the HSF and FUL types at 6 kV DC-link are presented and analyzed.
