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Sintered-reaction Bonded Silicon Nitride Densified by a Gas Pressure Sintering Process – Effects of Rare Earth Oxide Sinter...

Publication Type
Journal
Journal Name
Journal of the Korean Ceramic Society
Publication Date
Page Numbers
318 to 324
Volume
49
Issue
4

Reaction-bonded silicon nitrides containing rare-earth oxide sintering additives were densified by gas pressure sintering. The sintering behavior, microstructure and mechanical properties of the resultant specimens were analyzed. For that purpose, Lu2O3-SiO2 (US), La2O3-MgO (AM) and Y2O3-Al2O3 (YA) additive systems were selected. Among the tested compositions, densification of
silicon nitride occurred at the lowest temperature when using the La2O3-MgO system. Since the Lu2O3-SiO2 system has the highest melting temperature, full densification could not be achieved after sintering at 1950oC. However, the system had a reasonably high bending strength of 527 MPa at 1200oC in air and a high fracture toughness of 9.2 MPa·m1/2. The Y2O3-Al2O3 system had the highest room temperature bending strength of 1.2 GPa