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A-site stoichiometry and piezoelectric response in thin film PbZr1−xTixO3...

Publication Type
Journal
Journal Name
Journal of Applied Physics
Publication Date
Volume
117
Issue
204104

Lead zirconate titanate (PZT) films with Zr/Ti ratios of 52/48 and 30/70 annealed at varying partial
pressures of PbO within the perovskite phase field exhibited permittivities of 1150 and 600,
respectively, with loss tangents of 0.02. Many of the functional properties, including the permittivity,
piezoelectricity as indicated via the Rayleigh coefficients, and the aging rates were found to be
weakly dependent of the lead content in the single phase field. Minor polarization–electric field
hysteresis loops and piezoelectric coefficient e31,f values after a hot poling process suggest that the
point defect helps stabilize the aligned domain states. Measurements of the local nonlinear response
show an increased low response cluster size with decreasing PbO content, indicating that PbO
deficiency acts to reduce domain wall motion where it is already low