Publication Type
Journal
Journal Name
Journal of Crystal Growth
Publication Date
Page Numbers
231 to 235
Volume
294
Issue
2
Abstract
In-situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of alpha-CuInSe2 formation from Cu-In precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization, the formation of CuSe was observed, followed by its transformation to CuSe2 at higher temperature. The formation of alphaproduction of MoSe2 was clearly detected at temperatures above 440 C. The reaction kinetics was analyzed using both the Avrami and parabolic rate models to estimate diffusion limited activation energies of 124 (�19) and 100 (�14) kJ/mol, respectively.
