Publication Type
Journal
Journal Name
Journal of Vacuum Science & Technology B
Publication Date
Volume
30
Issue
4
Abstract
Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor
(HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was
improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials,
together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT
sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low
operation temperature and low power consumption oxygen sensor can be achieved by
combining the SnO2 films with the AlGaN/GaN HEMT structure
