Abstract
A technique to estimate the specific grain boundary resistivity contribution in Cu lines using nanoscale four-probe STM measurements across thin film bamboo grain boundaries is presented. FIB milling of evaporated copper films was utilized to create Cu lines of various widths (400-4 microns). BSE and OIM microscopy was used to characterize the microstructure and texture of annealed Cu films containing these lines. Preliminary measurements using a fixed probe spacing with the four-probe STM technique indicated the sensitivity of the technique to detect variations in resistances along the length of the line though conversion to resistivities resulted in abnormally high values likely caused by material redeposition and/or Ga ion impregnation during FIB milling.
