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Tailoring Magnetic Doping in the Topological Insulator Bi2Se3...

by Jian-min Zhang, Wenguang Zhu, Ying Zhang, Di Xiao, Yugui Yao
Publication Type
Journal
Journal Name
Physical Review Letters
Publication Date
Page Number
266405
Volume
109
Issue
26

WetheoreticallyinvestigatethepossibilityofestablishingferromagnetisminthetopologicalinsulatorBi2Se3viamagneticdopingof3dtransitionmetalelements.Theformationenergies,chargestates,bandstructures,andmagneticpropertiesofdopedBi2Se3arestudiedusingfirst-principlescalculationswithindensityfunctionaltheory.OurresultsshowthatBisubstitutionalsitesareenergeticallymorefavorablethaninterstitialsitesforsingleimpurities.DetailedelectronicstructureanalysisrevealsthatCrandFedopedmaterialsarestillinsulatinginthebulkbuttheintrinsicbandgapofBi2Se3issubstantiallyreducedduetothestronghybridizationbetweenthedstatesofthedopantsandthepstatesoftheneighboringSeatoms.ThecalculatedmagneticcouplingsuggeststhatCrdopedBi2Se3ispossibletobebothferromagneticandinsulating,whileFedopedBi2Se3tendstobeweaklyantiferromagnetic.