Publication Type
Conference Paper
Publication Date
Conference Name
European Microscopy Congress (EMC 2008)
Conference Location
Aachen, Germany
Conference Date
-
Abstract
It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 �m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs� growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.