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Theory of nonspecular tunneling through magnetic tunnel junctions...

by Xiaoguang Zhang, Y. Wang, X. F. Han
Publication Type
Journal
Journal Name
Physical Review B
Publication Date
Page Number
144431
Volume
77
Issue
14

We present a simple formalism of vertex corrections for the tunneling probability of an electron due to nonspecular scattering. Predictions of the model in terms of the barrier thickness dependence of the resistance and oscillatory TMR are in excellent agreement with experiment. Applying this model to the analysis of the temperature dependence of TMR yields a temperature dependent scattering rate that is consistent with electron-magnon scattering at the interface.