Abstract
Nanostructured materials are rarely synthesized with appropriate phase and/or morphology. In this study, critical additional of as-synthesized nanostructured materials, such as annealing and/or activation of dopants, are addressed using infrared plasma arc lamps (PAL) over areas as large as 1,000 cm2. The broad spectral range of the PAL and the spectral variation of light absorption in nanostructured materials make the selection of processing parameters extremely difficult, posing a major technological barrier. In this study, the measurement of the surface temperature using various techniques for ZnO films on crystalline silicon wafers is discussed. An energy transport model for the simulation of rapid thermal processing using PAL is presented. The experimental and computational results show that the surface temperature cannot be measured directly and that computer simulation results are an effective tool for obtaining accurate data on processing temperatures.
