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Transport properties of hole-doped CuBiS$_{2}$...

by David S Parker, David J Singh
Publication Type
Journal
Journal Name
Physical Review B
Publication Date
Page Number
233206
Volume
83
Issue
23

We present the results of density-functional theory and Boltzmann transport calculations suggesting that hole-doped CuBiS$_{2}$ - a material commonly available as a mineral and comprised of relatively inexpensive elements - may show good thermoelectric performance at ambient temperature.